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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). G E M B KTC4075 EPITAXIAL PLANAR NPN TRANSISTOR M 2 D 3 DIM A B C D E G H J K L M N High hFE : hFE=70 700. 1 MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN A Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA2014. Small Package. C H N K N J L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 5 150 30 100 150 -55 150 UNIT V V V mA mA mW 1. EMITTER 2. BASE 3. COLLECTOR USM Marking Type Name h FE Rank L ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure ICBO IEBO hFE (Note) VCE(sat) fT Cob NF ) TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1kHz, Rg=10k 400, BL(8):350~700 MIN. 70 80 TYP. 0.1 2.0 1.0 MAX. 0.1 0.1 700 0.25 3.5 10 V MHz pF dB UNIT A A SYMBOL Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 2001. 12. 5 Revision No : 3 1/3 KTC4075 I C - V CE 240 h FE - I C 1k COMMON EMITTER COLLECTOR CURRENT I C (mA) 6.0 5.0 3.0 2.0 DC CURRENT GAIN h FE 200 160 120 80 40 0 COMMON EMITTER Ta=25 C 500 300 Ta=100 C Ta=25 C Ta=-25 C VCE =6V 1.0 0.5 I B =0.2mA 0 100 50 30 VCE =1V 0 1 2 3 4 5 6 7 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 V BE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 5 3 COMMON EMITTER I C /I B =10 Ta=25 C 0.1 0.05 0.03 0 =1 Ta 0 C 1 0.5 0.3 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 0.1 COMMON EMITTER V CE =10V Ta=25 C I B - V BE 3k COMMON EMITTER VCE =6V BASE CURRENT I B (A) 1k 300 100 30 10 3 1 0.3 0 0.3 1 3 10 30 100 300 0.2 0.4 Ta=1 00 C Ta=2 5C Ta=25 C 0.6 0.8 1.0 1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) 2001. 12. 5 Revision No : 3 2/3 KTC4075 h PARAMETER - I C 2k 1k 500 300 100 GR BL Y O h ie xk BL Y O GR Y O h re x10 -4 GR h oe x GR BL Y O COMMON EMITTER VCE =12V, f=270Hz Ta=25 C h fe h PARAMETER - V CE 2k 1k 300 GR COMMON EMITTER I C =2mA, Ta=25 C BL Y O h fe h PARAMETER 50 30 10 5 3 1 0.5 0.3 0.1 h PARAMETER 100 30 10 3 GR Y BL Y O O h ie xk GR BL GR Y h re x10 -4 O BL 1 0.3 0.1 0.5 0.1 0.5 1 3 5 10 30 50 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION PC (mW) Pc - Ta 125 100 125 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2001. 12. 5 Revision No : 3 BL h oe x 300 3/3 |
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